A new approach could help make future AI chips smaller and more energy-efficient. A KAIST-led research team has used a single material to address one of the major obstacles facing atomically thin semiconductors: the difficulty of efficiently injecting charge. The technology could contribute to next-generation AI and low-power semiconductor devices in which multiple ultrathin layers are vertically integrated to increase device density and performance.A new approach could help make future AI chips smaller and more energy-efficient. A KAIST-led research team has used a single material to address one of the major obstacles facing atomically thin semiconductors: the difficulty of efficiently injecting charge. The technology could contribute to next-generation AI and low-power semiconductor devices in which multiple ultrathin layers are vertically integrated to increase device density and performance.Electronics & Semiconductors[#item_full_content]